WIN Semiconductorshas announced the beta release of its moisture-resistant 0.1µm pHEMT technology, PP10-29.

WIN Semiconductors Corp announces the commercial release of its next generation integrated mmWave GaAs platform, PQG3-0C.

The NP12-01 platform provides increased gain and efficiency for high transmit power applications through Ka-band

WIN Semiconductors, a compound semiconductor foundry, announces the release of its 0.1µm pHEMT technology, PP10-20.

Pure-play compound semiconductor foundry, WIN Semiconductors, has expanded its gallium nitride (GaN) portfolio with the commercial release of a 0.15?m-gate technology, NP15-00, that supports emerging mmWave PA applications including radar, satellite communications and 5G massive MIMO infrastructure.

Pure-play compound semiconductor foundry, WIN Semiconductors, has announced the commercial release of its high integration mmWave GaAs platform, PIH1-10. Optimised for 5G front-ends, the PIH1-10 technology combines an advanced 100GHz ƒt enhancement-mode pHEMT with monolithic PIN and Schottky diodes to provide best in class mmWave performance for all front-end functions.

WIN Semiconductors is driving the development and deployment of 5G user equipment and network infrastructure in the sub-6GHz and mmWave frequency bands. Front-end semiconductor technology has a significant influence on battery life and total power consumption of mobile devices and active antenna arrays employed in mmWave network infrastructure.

As 5G user equipment and network infrastructure in the sub-6GHz and mmWave frequency bands rolls out, GaAs technology will play an important role because front-end semiconductor technology has a significant influence on battery life and total power consumption of mobile devices and active antenna arrays employed in mmWave network infrastructure.

WIN Semiconductors has expanded its portfolio of highly integrated GaAs technologies with the release of a pHEMT technology. The PIH0-03 platform incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1um pseudomorphic HEMT process, PP10. This integrated technology, PIH0-03, adds a highly linear vertical Schottky diode with cut-off frequency over 600GHz, as well as multi-function PIN diodes while preserving t...

To support current and future 5G applications, WIN Semiconductors has expanded its gallium nitride (GaN) process capabilities to include a 0.45um-gate technology. The NP45-11 GaN-on-SiC process from WIN Semiconductors allows customers to design hybrid Doherty power amplifiers used in 5G applications including MIMO (multiple-input and multiple-output) wireless antenna systems. MIMO base stations often combine Doherty power amplifiers with linearis...

  The largest pure-play compound semiconductor foundry, WIN Semiconductors has released an optimised version of its 0.25µm gallium nitride technology, NP25, which provides superior DC and RF transistor performance.