SJTs exhibit low on-state & switching losses

These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, DC/DC converters, and switched mode power supplies.

Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are applicable to inductive switching applicationsm, because SJTs are the only widebandgap switch offering over 10ms repetitive short circuit capability, even at 80% of the rated voltages (eg. 960V for a 1200V device). In addition to the sub-10ns rise/fall times and a square Reverse Biased Safe Operation Area (RBSOA), the gate return terminal significantly improves the ability to reduce the switching energies.

The products in the range offer transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit a positive TCR_(ON), and are capable of being driven at low gate voltages, unlike other SiC switches.

SiC Schottky Rectifiers used in these mini-modules show low R_(ON) voltage drops, good surge current ratings and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are suitable for use in high efficiency circuits.

"GeneSiC’s SiC Transistor and Rectifier products are designed and manufactured to realise low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters" said Dr. Ranbir Singh, President, GeneSiC Semiconductor.

The first product in the series, GA50SICP12-227, is currently available, with three further additions planned shortly.