GeneSiC Semiconductor has announced the immediate availability of next-generation 3300V and 1700V 1000mΩ SiC MOSFETs – G2R1000MT17J, G2R1000MT17D, and G2R1000MT33J. These SiC MOSFETs enable high performance levels, based on flagship Figures of Merit (FoM) that enhance and simplify power systems across energy storage, renewable energy, industrial motors, general-purpose inverters and industrial lighting.

Enabling low Turn-On energy losses while offering flexible, modular designs in high frequency power converters, GeneSiC has introduced 20mW, 1200V SiC Junction Transistor-Diodes in an isolated, 4-leaded mini-module package. High frequency, high voltage, low R(ON) SiC Transistors and Rectifiers reduce the size, weight and volume of electronics applications requiring higher power handling at high operating frequencies.

GeneSiC has announced a line of compact, high temperature SiC Junction Transistors (SJTs) and a line of rectifiers in TO-46 metal cans. These discrete components are designed to operate at temperatures of over 225°C. The use of high voltage, low RDS(ON) SiC Transistors and Rectifiers will reduce the size and weight of electronics applications requiring higher power handling at elevated temperatures.

GeneSiC Semiconductor announces the availability of Gate Driver evaluation board and has expanded its design support for what it calls the the industry’s lowest loss switches, the SiC Junction Transistor (SJT), with a fully-qualified LTSPICE IV model. Using the Gate Driver Board, power conversion circuit designers can verify the benefits of sub-15ns, temperature independent switching characteristics of SiC Junction Transistors, wi...