SiC MOSFETs for miniaturisation of auxiliary power

Products released are:

• G2R1000MT33J – 3,300V 1,000mΩ TO-263-7 G2R SiC MOSFET
• G2R1000MT17D – 1,700V 1,000mΩ TO-247-3 G2R SiC MOSFET
• G2R1000MT17J – 1,700V 1,000mΩ TO-263-7 G2R SiC MOSFET
• G3R450MT17J – 1,700V 450mΩ TO-263-7 G3R SiC MOSFET
• G3R450MT17D– 1,700V 450mΩ TO-247-3 G3R SiC MOSFET

GeneSiC’s new 3,300V and 1,700V SiC MOSFETs, available in 1,000mΩ and 450mΩ options as SMD and Through-Hole discrete packages, are highly optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speeds.

These devices have substantially better performance levels as compared to competing products. An assured quality, supported by fast turn-around high volume manufacturing further enhances their value proposition.

Sumit Jadav, Senior Applications Manager at GeneSiC Semiconductor, said: “In applications like 1,500V solar inverters, the MOSFET in auxiliary power supply may have to withstand voltages in the range of 2,500V, depending on the input voltage, turns ratio of the transformer and the output voltage. High breakdown voltage MOSFETs obviate the need for series connected switches in Flyback, Boost and Forward converters thereby reducing parts-count and reducing circuit complexity.

“GeneSiC’s 3,300V and 1,700V discrete SiC MOSFETs allow the designers to use simpler single switch based topology and at the same time provide customers with reliable, compact and cost-effective system.”

Features

• High price-performance index
• Flagship QG x RDS(ON) figure of merit
• Low intrinsic capacitance and low gate charge
• Low conduction losses at all temperatures
• High avalanche and short circuit ruggedness
• Threshold voltage for normally-off stable operation up to 175°C

Applications

• Renewable energy (solar inverters) and energy storage
• Industrial motors (AC servos)
• General-purpose inverters
• Industrial lighting
• Piezo drivers
• Ion-beam generators