SemiQ announces SiC full-bridge modules

The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications.

Available in 18, 38 and 77mΩ (R_DSon) variants, the modules have been tested at voltages exceeding 1350V and deliver a continuous drain current of up to 102A, a pulsed drain current of up to 250A and a power dissipation of up to 333W.

Operational with a junction temperature of up to 175^oC, the rugged B2 modules have low switching losses (E_ON 0.13mJ, E_OFF 0.04mJ at 25^oC - 77mΩ module), low zero-gate voltage drain/gate source leakage (0.1µA/1nA - all modules) and low junction to case thermal resistance (0.4^oC per watt - 18mΩ module).

"By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications. This family of modules simplifies system design, and enables faster time-to-market for next-generation solar, storage, and charging solutions," said Seok Joo Jang, Director of Module Engineering, SemiQ.

Available immediately, the modules can be mounted directly to a heat sink, are housed in a 62.8 x 33.8 x 15.0mm package (including mounting plates) with press fit terminal connections and split DC negative terminals.