SemiQ has announced a series of highly efficient 1,200V SiC MOSFET six-pack modules. These have been designed to enable lower cost and more compact system-level designs at large scale.

SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has confirmed it has begun shipping its SiC MOSFET modules for integration into advanced cell cycling systems used by several of the world's leading battery manufacturers.

SemiQ will give the first official unveiling of the company’s new 1700V and 1200V Gen 3 SiC MOSFETs at the 2025 Applied Power Electronics Conference (APEC).

SemiQ, a designer, developer and global supplier of superior silicon carbide (SiC) solutions, has announced a family of three 1200V SiC full-bridge modules, integrating two of the company's rugged high-speed switching SiC MOFSETs with reliable body diode.

SemiQ has announced the QSiC 1200V MOSFET, a 3rd-gen SiC device that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller versus QSiC’s 2nd-gen SiC MOSFETs and has been developed to increase performance and cut switching losses in high-voltage applications. SemiQ is targeting a diverse range of markets including EV-charging stations, solar inverters, industrial power supplies ,and induction he...

SemiQ has announced a family of 1700 V SiC MOSFETs designed to meet the needs of medium-voltage high power conversion applications, such as photovoltaic and wind inverters, energy storage, EV and road-side charging, uninterruptable power supplies, and induction heating/welding.

SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced the addition of an S7 package to its QSiC family of 1,200V, half-bridge MOSFET, and Schottky diode SiC power modules.

SemiQ has added 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC product line.

SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for efficient, high-performance, and high-voltage applications, will showcase its latest SiC power solutions and recently launched Known-Good-Die (KGD) screening process at PCIM Europe 2024 in Nuremberg from 11–13 June 2024.

SemiQ, a  provider of silicon carbide (SiC) solutions for high-performance and high-voltage applications, has launched a known-good-die (KGD) screening programme. 

SemiQ has officially opened its newest office in Taiwan on April 2nd, 2024 to increase global footprint.

SemiQ has unveiled the latest addition to the company’s QSiC family, the QSiC 1200V SiC MOSFET modules in full-bridge configurations.

SemiQon from Finland, and Canada’s CMC Microsystems announce a collaboration agreement to advance silicon-based quantum processor technology.

SemiQ, a designer, developer, and global supplier of superior SiC solutions for ultra-efficient, high-performance, and high-voltage applications, will be exhibiting its latest portfolio of advanced silicon carbide (SiC) modules at the Applied Power Electronics Conference (APEC) in Long Beach, CA 25–29 February 2024.

SemiQ has expanded its QSiC power modules portfolio with the introduction of a new series of 1200V SiC power MOSFETs in half-bridge packages.

SemiQ recently announced the expansion of its QSiC silicon carbide module portfolio. The launch includes a new series of 1200V MOSFETs, available both with and without 1200V SiC Schottky Diodes, packaged in SOT-227.

SemiQ has announced the release of its third generation 1,700V five amp Schottky SiC Diodes. The GP3D005A170B diode comes in the industry standard TO-247-2 package as well as bare die format. 10A and 20A 1700V diodes will follow shortly.