SemiQ 1200V SiC MOSFET for high-power applications

It will be on display for the first time at the Applied Power Electronics Conference (APEC), on 16-20^th March 2025, booth #1348.

In addition to having a drain-to-source voltage (VDS) of 1200V, the MOSFET reduces total switching losses to 1646µJ and has a low on-resistance (RDS,on) of 16.1mΩ. It is available as a bare die or in a four-pin TO-247 4L discrete package measuring 31.4 x 16.1 x 4.8mm, which includes a reliable body diode and a driver-source pin for gate driving.

High-quality known good die (KGD) testing has been conducted using UV tape and tape & reels, with all parts undergoing testing and verification at voltages exceeding 1400V, as well as being avalanche tested to 800mJ. Reliability is further improved through the device’s 100% wafer-level gate oxide burn-in screening and 100% UIL testing of discrete packaged devices.

The device has been developed to have a low reverse recovery charge (QRR 470nC) and lower capacitance, improving switching speed, switching losses, EMI and overall efficiency; to be easy to parallel; and with a longer creepage distance (9mm), improving electrical insulation, voltage tolerance, and reliability.

Specifications: ratings and electrical/thermal characteristics

The QSiC 1200V MOSFETs has a continuous operational and storage temperature of -55^oC to 175^oC. It has a recommended operational gate-source voltage of -4/18V, with a VGSmax of -8/22V, and a power dissipation of 484W (core and junction temperature 25^oC).

For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.26^oC per watt (40^oC per watt junction to ambient). Its Zero gate voltage drain current is 100nA, with a gate-source voltage current of 10nA. Its AC characteristics include a turn-on delay time of 21ns with rise time of 25ns; its turn-off delay time is 65ns with a fall time of 20ns.

An increased range of resistances is available in bare-die and TO-247 4L packages with the following options:

• 16mΩ: GP3T016A120X / GP3T016A120H
• 20mΩ: GP3T020A120X / GP3T020A120H
• 40mΩ: GP3T040A120X / GP3T040A120H
• 80mΩ: GP3T080A120X / GP3T040A120H

Both the 16mΩ (AS3T016A120X / AS3T016A120H) and 40mΩ (AS3T040A120X / AS3T040A120H) options have been qualified for Automotive Applications Product Validation according to AEC-Q101.