Rad-hard 100V and 200V GaN power devices for use in space

These GaN devices come packaged in hermetic packages in very small footprints. Chip-scale versions of this device are available from EPC.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. Accordingly, they enable higher switching frequencies that result in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

“These two new additions to our rad-hard product line offer designers high power, ultra-low on-resistance solutions – enabling a generation of power conversion and motor drives in space operating at higher efficiencies and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.

More info on EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging, motor drive, and ion thrusters.