EPC Space

17 Parkridge Road Haverhill, Massachusetts 01835 USA
United States of America
https://epc.space/

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

EPC Space Articles

Displaying 1 - 5 of 5

Power

30^th August 2023

200V and 300V rad-hard GaN power devices

EPC Space has announced the introduction of two new rad-hard GaN transistors with low on-resistance and high current capability

Power

20^th July 2022

Rad-hard 100V and 200V GaN power devices for use in space

EPC Space announces two new rad-hard (radiation-hardened) GaN transistors with ultra-low on-resistance and low gate charge for high power density solutions. These solutions are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET.

Products

19^th January 2022

Demo boards reduce time to market for rad-hard GaN power devices

Demonstration boards released by EPC Space, reduce time to market for rad-hard GaN power devices in hi-rel and aerospace applications

Products

4^th August 2021

Rad-hard GaN transistor meets spaceborne performance

EPC Space has introduced the EPC7014UB GaN transistor for space mission equipment and claims that it has superior efficiency and performance compared to silicon devices.

Power

23^rd November 2020

Rad-hard GaN power transistors

GaN transistors have been designed for critical applications in the high reliability or commercial satellite space environments. The family of 40 to 300V radiation hardened (rad-hard) GaN transistors are by EPC Space and range from 4.0 to 30A.

First Previous Page 1 of 1 Next Last