JEDEC-qualified 600V GaN-on-Silicon family expanded

19th March 2014

Jacqueline Regnier

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At APEC 2014, Transphorm announce what they believe to be the industry’s first 600V GaN-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600V GaN HEMTs (high electron mobility transistors) utilise the company’s patented, high-performance EZ-GaN technology.

The company's EZ-GaN technology combines low switching and conduction losses, reducing the overall system energy dissipation up to 50% compared with using conventional silicon-based power conversion designs.

The PQFN products, TPH3002LD and TPH3002LS, are offered in widely-used, low-profile PQFN88 packages and feature 290mΩ RDS(on), 29nC Qrr and low inductance for superior high-frequency switching capability. The PQFN88-packaged “LD” devices also feature a kelvin connection to better isolate the gate circuit from the high-current output circuit to further reduce EMI.

In addition, the TPH3002PD and TPH3002PS TO220-packaged 600V GaN HEMTs have been released for use in smaller, lower power applications such as adapters and all-in-one computer power supplies. These devices also feature 290mΩ RDS(on), 29nC Qrr and high- frequency switching capability.

“Every year since 2011 we have announced new advancements of our GaN technology at this major tradeshow - and this year is no exception,” said Primit Parikh, President of Transphorm. “Now by introducing the industry’s first qualified 600V GaN PQFN-packaged products, we have increased the types of applications where GaN can enable dramatically more efficient, compact and low-cost solutions. This dispels the widespread misconception that GaN isn’t ready for prime-time. Once again we’ve shown GaN products are available today and are actually being used in a multitude of real-world applications.”

The TO220-packaged TPH3002PD and TPH3002PS and the PQFN-packaged TPH3002LD and TPH3002LS are available for sale to qualified customers worldwide. Additionally, evaluation boards are available with the 600V TO220 GaN HEMT devices in configurations for LLC DC/DC converter, totem-pole PFC and all-in-one power supply.