Power transistors, based on Transphorm’s third generation of GaN technology exhibit lower EMI and increased gate noise immunity. The company believes it offers the only JEDEC and AEC-Q101-qualified GaN FETs in the market today.

Claimed to have the lowest Rds(on) in a TO-247 package, the TPH3207WS GaN FET was announced at PCIM 2016 by Transphorm

From APEC 2015, Transphorm has announced that it is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in an TO-247 package. Offering resistance of 63 mΩ and 34A ratings, the device utilises the company’s Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications.

Transphorm Japan and Fujitsu Semiconductor have announced that Fujitsu’s CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, has started mass production of Gallium Nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility will expand Transphorm’s GaN power device business, aiming to satisfy the increasing market demands for GaN devices, thereby enabling next-gen compact, energy-e...

Patents in the area of GaN (Gallium Nitride) power conversion, directed towards the operation and use of GaN transistors, have been secured by Transphorm. Patent application number 8,816,751 entitled "Ip" was granted by the United States Patent and Trademark Office (USPTO) on 26th August, 2014, while 13/887,204 entitled "Bridge Circuits and Their Components" was granted on 27th August 2014.

HY-LINE Power Components has signed a distribution agreement with Transphorm to stock and distribute its family of 600 Volt GaN high electron mobility transistors (HEMTs) in Central Europe. The deal was unveiled during the PCIM exhibition in Nuremberg. HY-Line’s technical expertise will support the growing demand for JEDEC-qualified 600 Volt GaN products that have now grown to the level requiring an expanding sales channel to respond to op...

Bret Daniels has joined Transphorm as its V.P. of Sales, assuming responsibility for growing Transphorm’s revenue as more customers move their designs into production. This appointment validates Transphorm’s leadership in providing GaN-based power conversion in power supplies and adapters, motor drives, solar panels and electric vehicles.

At APEC 2014, Transphorm announce what they believe to be the industry’s first 600V GaN-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600V GaN HEMTs (high electron mobility transistors) utilise the company’s patented, high-performance EZ-GaN technology.

Firmly establishing the company at the forefront of GaN (Gallium Nitride) technology, Transphorm has announced that it will present two “Industry Sessions” presentations at APEC 2014. At last year’s APEC show, Transphorm introduced what they believe to be the first and only 600V JEDEC-qualified GaN-on-Silicon HEMTs (high electron mobility transistors).

Following Transphorm's acquisition of Fujitsu’s GaN Power Conversion business, the two companies have announced the formation of a new company: Transphorm-Japan, a wholly-owned subsidiary of Transphorm. This combines Transphorm’s commercially qualified GaN devices with Fujitsu’s internal market demand, resulting in: over 250 total combined patents; access to a high-quality, high-scale foundry in Japan; and capacity to support gl...

Transphorm today announced the Total GaN family of GaN on silicon transistors and diodes, establishing the world’s first JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.

Transphorm announce the Total GaN family of Gallium Nitride on silicon transistors and diodes, establishing the world’s first JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.

Transphorm today announced at the 2013 ARPA-E Energy Innovation Summit that its novel 600V Gallium Nitride (GaN) module has enabled the world’s first GaN-based high power converter. Transphorm will demonstrate the product built with its customer-partner Yaskawa Electric, Japan at the upcoming APEC 2013 industry conference.

Transphorm today announced a $35 million Series E financing led by Innovation Network Corporation of Japan and Nihon Inter Electronics Company, with participation from existing venture investors Kleiner Perkins Caufield & Byers, Foundation Capital, Google Ventures, Quantum Strategic Partners, Lux Capital, and Bright Capital.

Transphorm have revealed the JEDEC qualification of the company’s TPH2006PS, GaN HEMT on SiC substrate, making it the industry’s first qualified 600V HEMT device. The TPH2006PS, based on its patented, high-performance EZ-GaN technology, combines low switching and conduction losses resulting in reduced energy loss of up to 50% compared to conventional silicon-based power conversion designs, today.