Isolated IGBT reduces thermal resistance

The turn-off Energy Eoff is stated with 2.4mJ per pulse, rated at 40A of switching current and a bus voltage of 600V at a junction temperature TJ = 150°C.

Due to the IXYS patented DCB leadframe technology (Direct Copper Bonding) there is no need for the usual standard copper leadframe, having instead a backside-isolated (3kVAC @ t=1min) solution with best thermal and mechanical behaviour.

Compared with unisolated standard solutions from other manufacturers the thermal resistance is significantly reduced because there is no need for additional interface material for isolating the backside.

The similar expansion coefficient of the DCB and the Si-Chip leading into very low mechanical stress and high thermal cycling capability and therefore long term reliability is ensured.

Additionally the manufacturing process handling can be simplified and accelerated with increasing quality because there is no special care needed for applying any interface material between heatsink and device.

The standard unisolated TO-247 can be easily changed to an isolated DCB solution due to the same mechanical dimensions having all advantages without any mechanical adjustments.

The ITF48IF1200HR is well suited for cost-sensitive applications having high requirements concerning reliability like UPS, SMPS, Inverter, generators, welding as well as automotive and aerospace systems.