Innoscience unveils new generation of BMS solutions

As demand for eco-friendly transportation, mobile energy storage, and compact power solutions continues to rise, advancements in BMS technology have become critical. Efficient battery protection and management are key to improving the safety and lifespan of batteries. GaN technology, with its superior power density, efficiency, and thermal performance, addresses these challenges by enhancing the overall efficiency of power systems. Innoscience’s bi-directional VGaN technology eliminates the need for a parasitic body diode and enables one VGaN device to replace two traditional silicon MOSFET pairs. These features make VGaN ideal for applications such as Over Voltage Protection (OVP) and battery management systems.

Innoscience's latest innovation, a 48V/180A BMS demo, showcases their design expertise in high-side, same-port BMS applications. Central to this design is the 100V VGaN device, INV100FQ030A, housed in a compact 4mm x 6mm FCQFN package. With a maximum on-resistance of 3.2mΩ, this product does not require a heat sink and maintains a temperature rise below 50°C. The system integrates a 16-string charging and discharging battery protection system, utilizing the VGaN’s bidirectional conduction and cut-off capabilities. It offers four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode.

The 48V/180A high-side BMS from Innoscience is ideal for applications such as home batteries, portable charging stations, e-scooters, and e-bikes. It maximizes battery safety and lifespan by offering efficient charge and discharge control while minimizing temperature rise and system costs, all in a compact, portable design.