Innoscience has announced that the U.S. International Trade Commission’s (ITC) November 7, 2024 final determination has confirmed the ability of Innoscience’s customers to import their products into U.S. remain unaffected by the ongoing patent dispute between Innoscience and EPC.

Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices.

Innoscience Technology, developing cost-effective, high-performance gallium-nitride-on-silicon (GaN-on-Si) power solutions, has introduced a new generation of battery management system (BMS) solutions built on its proprietary VGaN technology.

Innoscience has firmly denounced the baseless accusations of patent infringement by Infineon Technologies AG.

Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has defeated the entirety of EPC’s ’508 patent in the initial determination at the ITC.

Innoscience will demonstrate its position in the GaN market at the upcoming PCIM conference and exhibition (Nuremberg, June 11-13).

Innoscience Technology has announced the INS1001DE which is designed to drive single-channel GaN HEMTs in either low-side, high-side, or secondary-side SR applications.

Innoscience welcomes two decisions, from March 20, 2024, by the United States Patent and Trademark Office (USPTO) to institute review of the validity of the two remaining US patents, as asserted by Efficient Power Conversion Corporation (EPC) against Innoscience.

Innoscience firmly denounces the accusations made by Infineon Technologies in a recent patent infringement lawsuit against three Innoscience entities.

Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced new, low RDS(on), high power devices to its family of 650V/700V enhancement-mode power transistors.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, is attending the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a new range of low voltage discrete HEMTs in FCQFN packaging.

Innoscience Technology, dedicated to developing a worldwide energy ecosystem based on efficient, cost-effective gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced its collaboration with Legrand, a leading company in electrical and digital building infrastructures.

Innoscience Technology has signed a Pan-European distribution agreement with Germany-headquartered MEV Elektronik Service GmbH.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has shipped more than 300 million pieces of its InnoGan gallium nitride chips as of August 2023, helping customers achieve small size, energy efficient, and low loss product design.

Innoscience Technology has announced that Dr Denis Marcon, General Manager, Innoscience Europe will address the audience at the International Semiconductor Executive Summit EU (ISES EU) Power conference with a paper entitled: ‘Mass manufacturing 8-inch GaN-on-Si power devices: the next generation of power switching technology’.

Innoscience Technology has announced a distribution deal with CODICO, covering all European countries.

Innoscience, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced that after OPPO and RealMe, the consumer electronics giant OnePlus is also using uses Innoscience’s bidirectional VGaN IC in the phone's battery protection board, inside the handset.

The performance advantages of GaN are well understood and the challenges of driving GaN HEMTs have been overcome. Remaining concerns may be price, availability and reliability, says Dr Denis Marcon, General Manager, Innoscience Europe.