Infineon Technologies’ IGC033S10S1

Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.

Summary of features

-                 100V e-mode power transistor

-                 Dual-side cooled package

-                 No reverse recovery charge

-                 Reverse conduction capability

-                 Low gate charge, low output charge

-                 Qualified according to JEDEC

Target applications

-                 Audio amplifier solutions

-                 Low power BDC/BLDC motor drives up to 72V

-                 Photovoltaic

-                 Telecommunication infrastructure

As a leader in power and IoT systems, Infineon is driving decarbonisation and digitalisation to enable a net-zero economy. Gallium-nitride (GaN) solutions are vital in reaching these goals and allow the benefits of higher energy efficiency and power density.

With 20+ years of experience in GaN technology and the acquisition of GaN Systems in October 2023, Infineon is significantly accelerating its GaN roadmap. Based on the complementary strengths of Infineon and legacy GaN Systems, its customers benefit from an enlarged GaN product portfolio ranging from 100 to 700V, in-depth application and system support, innovations such as power solutions with integrated driver ICs and a wide variation of innovative packages. It provides all the building blocks for full system solutions, reducing time-to-market and thus bringing greener and smarter technologies to customers even faster.

Find out more: https://www.infineon.com/cms/en/product/power/gan-hemt-gallium-nitride-transistor/igc033s10s1/