The ability to detect pedestrians in dense urban environments is currently a challenge to enable the next level of automated and autonomous driving. To meet the demands of SAE-defined L2+ to L4 autonomous driving, the development of a new generation of 4D and imaging radars is crucial. That’s why Infineon Technologies has released the final samples of its RASIC CTRX8191F, a new state-of-the-art 28nm radar MMIC.

Infineon Technologies and Eve Energy Co., Ltd. (EVE Energy), a manufacturer of lithium batteries, have signed a memorandum of understanding (MoU).

Infineon plans to implement ISO/SAE 21434 product compliance for TRAVEO T2G automotive microcontrollers.

Higher efficiency and lower environmental footprint resulting in more powerful, sustainable applications: products manufactured in the 28 nanometer technology by Infineon Technologies are setting the tone in the security semiconductor industry since their introduction at TRUSTECH 2022.

Infineon has won the German Sustainability Award in the "Electrical Engineering and Electronics" category.

At TRUSTECH, Infineon will present innovative payment and ID solutions that support an environmentally friendly, secured, and convenient lifestyle.

The IGC033S10S1 is a 100V normally-off e-mode power transistor housed in a small PQFN 3 x 5 package, enabling high power density designs.

Simran Khokha, Product Manager for MCUs at Infineon, has a Dual MSc Degree from  NTU, Singapore, and TUM, Germany in electrical engineering.

Infineon Technologies introduces the EiceDRIVER Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC, and GaN gate driver power supplies. With the 2EP1xxR family, Infineon extends its portfolio of power devices to provide designers with a solution for isolated gate driver supply.

Infineon has added FreeRTOS support for its AURIX TC3x microcontrollers (MCUs).

Infineon and Quantinuum have announced a strategic partnership to develop the future generation of ion traps.

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R DS(on). Infineon Technologies addresses this challenge with the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET.

The safe hot-swap operation in AI servers and telecom requires MOSFETs with a robust linear operating mode as well as a low R DS(on)

Stellantis and Infineon have announced they will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering clean, safe and affordable mobility to all.

Infineon recently announced the laucnh of a new family of high-voltage discretes, the CoolGAN Transisotrs 650V G5, strengthening its Gallium Nitride (GaN) portfolio.

Infineon is launching the new MOTIX TLE9189 gate driver IC for safety-critical applications for 12V brushless DC (BLDC) motors.

Infineon develops innovative products to help pave the way to a sustainable AI era, offering improved, smaller, and more cost-effective systems and solutions for more eco-friendly AI applications. EBV & Infineon are teaming up at electronica, where visitors will have the opportunity to explore five joint pop-up boothsand enter a prize draw, including the chance to win a Samsung Galaxy Watch 7.Discover how Infineon’s innovative products ...

Infineon has introduced DEEPCRAFT, a new software solution category brand for Edge AI and Machine Learning.

After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia, Infineon Technologies has unveiled the next milestone in semiconductor manufacturing technology.

At the upcoming electronica trade show in Munich, Infineon will illustrate how its solutions are driving the global trends of decarbonisation and digitalisation.