Infineon release CoolSiC Schottky diode 2000V G5

24th October 2024

Harry Fowle

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Infineon has introduced the CoolSiC Schottky diode 2000V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000V.

The product family is suitable for applications with DC link voltages up to 1500VDC and offers current ratings from 10 to 80A. This makes it ideal for higher DC link voltage applications such as in solar and EV charging applications.

The product family comes in a TO-247PLUS-4-HCC package, with 14mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80A, enables a significantly higher power density. It allows developers to achieve higher power levels in their applications with only half the component count of 1200V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.

In addition, the CoolSiC Schottky diode 2000V G5 utilises the .XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management. Furthermore, the robustness against humidity has been demonstrated in HV-H3TRB reliability tests. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.

The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000V in the TO-247Plus-4 HCC package that Infineon introduced in spring 2024. The CoolSiC diodes 2000V portfolio will be extended by offering them in the TO-247-2 package, which will be available in December 2024. A matching gate driver portfolio is also available for the CoolSiC MOSFETs 2000 V.