Infineon launches power transistors

Unlike other GaN products on the market, these transistors offer a 20 percent improvement in input and output figures-of-merit, leading to enhanced efficiency, reduced power losses, and more cost-effective solutions. This makes them ideal for a range of applications, including consumer chargers, notebook adapters, data centre power supplies, renewable energy inverters, and battery storage systems.

The series includes 13 devices with a voltage rating of 700 V and on-resistance values ranging from 20 mΩ to 315 mΩ. The broad specification range, along with various industry-standard packaging options such as PDFN, TOLL, and TOLT, allows for tailored R DS resistance and package choices to meet specific application needs. This flexibility enables optimisation of both electrical and thermal system performance, ensuring the most cost-effective implementation.

These transistors are characterised by their rapid turn-on and turn-off speeds and minimal switching losses. The range of on-resistance supports power systems from 20 W to 25,000 W. Additionally, the 700 V E-mode with an industry-leading transient voltage of 850 V enhances overall system reliability by providing increased robustness against user environment anomalies such as voltage peaks.