Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.
Infineon Technologies addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100V in RQFN 5 x 6mm package (IGD015S10S1) and 80V in RQFN 3.3 x 3.3mm package (IGE033S08S1).
“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardised footprint, easier handling and faster time-to-market,” said Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
The CoolGaN G3 100V Transistor devices will be available in a 5 x 6mm RQFN package with a typical on-resistance of 1.1mΩ. Additionally, the 80V transistor in a 3.3 x 3.3mm RQFN package has a typical resistance of 2.3mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high-performance transistor output in a familiar footprint.
Moreover, this chip and package combination allows for a high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density. These advantages are essential for power applications that require efficiency and reliability, particularly in industries such as automotive, industrial automation, and consumer electronics.
With the adoption of GaN growing in key applications such as data centres, fast charging, and renewable energy systems, the availability of transistors that align with existing silicon footprints is expected to accelerate GaN adoption. Engineers can now integrate GaN into their designs without significant layout changes, reducing redesign efforts and enabling more seamless transitions from traditional silicon-based solutions.
Availability
Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025. Full-scale production is expected to follow, allowing designers to evaluate and implement these devices in a range of applications. Learn more here.
