Power

IGBT enables more compact product designs

24th November 2014
Siobhan O'Gorman
0
Datasheets

 

The TO-247PLUS package has been introduced by Infineon Technologies, expanding its discrete IGBT portfolio for high power applications. The package, which has the same footprint and pin-out as JEDEC standard TO-247-3, enables up to 120A IGBT co-packed with a full rated diode.

The TO-247PLUS can be used in industrial applications such as UPS, welding, solar, industrial drives and automotive applications such as powertrain inverter to upgrade existing designs for higher power output or to improve the thermal conditions in the application. The higher current capability of the package reduces the number of devices in parallel, thus enabling more compact product designs.

The TO-247PLUS is designed for clip or pressure mounting to the heat sink. These mounting techniques ensure homogeneous distribution of pressure over the package, better heat conductivity and higher mechanical stability even under strong vibrations and mechanical shocks.

Due to the absence of the mounting hole, the TO-247PLUS package may accommodate a 70% larger silicon die area compared to standard TO-247. Additionally, the 26% larger thermal pad area contributes up to a 20% lower thermal resistance Rth (jh) compared to the standard package. The body has special 'plastic trousers' to increase the creepage distance to 4.25-2mm larger than the TO-247-3. The special plastic body compound of the package has tighter tolerances to clip pressure while a new bond wiring concept allows a DC collector current increase from 80 to 160A, contributing to a more reliable and longer lasting IGBT.

Samples of the TO-247PLUS discrete TRENCHSTOP IGBT in 100 and 120A are available now, with volume production scheduled for Q1 2015.

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