High-performance silicon carbide FETs with increased switching speeds

Based on UnitedSiC’s proprietary cascode configuration, this new series provides higher switching speeds while at the same time offering a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be affected without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50% reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.

Applications suitable for use with the UF3C FAST series include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in EV charging, telecom rectifiers and server supplies.

Built on UnitedSiC’s Gen-3 SiC transistor technology, the UF3C FAST series integrates a faster SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide band-gap technologies, the SiC cascode devices support standard 12V gate drive, and have assured avalanche ratings (100% production-tested).

“UnitedSiC’s new FAST SiC FET range is simple to use and offer a great cost-performance option,” said Anup Bhalla, VP Engineering at UnitedSiC. “The range offers design engineers the opportunity to extract even higher levels of efficiency from high-power designs.”

The range includes the following part numbers: UF3C120040K3S (1200V/35mΩ), UF3C065030K3S (650V/30mΩ) and UF3C065040K3S (650V/42mΩ).

Prices range from $14.50 for the UF3C065040K3S to $24.50 for the UF3C120040K3S at 1,000-piece quantities. Stock is available at Mouser and other local distributors.