Qorvo (originally called UnitedSiC), a leading provider of core RF and power solutions, has announced a next-generation series of 1,200V SiC FETs (silicon carbide field effect transistors) with industry-leading figures of merit in on-resistance.

At PCIM Europe (10-12 May 2022) UnitedSiC announced the fourth generation of is 1200V SiC FETs based on its Cascode technology. It also announced that since its acquisition by Qorvo, the company will be known as Qorvo from the end of this year.

UnitedSiC have launched an upgrade to its FET-Jet Calculator. This new version (v2) streamlines the SiC FET and Schottky diode selection process and simplifies the analysis of all power related results. First launched in March, this registration-free online tool facilitates the designer’s selection and performance comparison process, in different power applications and 26 topologies. With more available topologies, FET-Jet Calculator now su...

UnitedSiC has expanded its FET portfolio with the introduction of six new 650V and 1,200V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150mΩ versions, these latest SiC FETs represent another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC/DC converter...

Engineers have dreamed about the perfect semiconductor switch that has no conduction or switching losses, infinite voltage with no leakage and that is easy to drive. The dream continues, but the industry is getting pretty close with the latest SiC FET wide bandgap semiconductors  

UnitedSiC has launched the FET-Jet Calculator, a simple, registration-free online tool that facilitates selection and performance comparison in different power applications and topologies. This new tool allows engineers to make design decisions quickly and with confidence.

UnitedSiC has launched the first four devices based on its advanced Gen 4 SiC FET technology platform. As 750V SiC FETs, these Gen 4 devices enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecom rectifiers, datacentre PFC, and DC/DC conversion as well as renewable energy and energy storage.

UnitedSiC has announced four new Junction Barrier Schottky diodes to complement its FET and JFET transistor products. With good surge current performance, the UJ3D 1,200V and 1,700V devices are part of the company’s 3rd generation of SiC Merged-PiN-Schottky (MPS) diodes. Possessing a VF x Qc figure of merit (FoM), these SiC SB diodes are optimised for power system designs requiring elevated efficiency levels and ultra-fast switching speed.

UnitedSiC has announced it has entered into a distribution agreement with Macnica, a major distributor of semiconductor products in Japan. Macnica will partner with UnitedSiC to distribute its product portfolio to Japanese customers in high-growth applications such as electric vehicles, battery charging, IT infrastructure, renewable energy and circuit protection.

UnitedSiC has introduced the UF3SC065030D8 and UF3SC065040D8; a low RDS(on) SiC FETs available in the popular low-profile DFN eight by eight surface-mount package. The 650V devices replace two standard silicon devices, enabling engineers to build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach.

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, is introducing four new SiC FETs, with RDS(ON) levels as low as 7mohms, delivering unprecedented levels of performance and efficiency for use in high-power applications such as electric vehicle (EV) inverters, high-powered DC/DC converters, high-current battery chargers and solid-state circuit breakers.

A Dutch solar car team from University of Twente and Saxion Hogeschool has selected silicon carbide (SiC) devices from UnitedSiC ahead of a major solar racing challenge in October. UnitedSiC provided product samples of their FAST Series of SiC FETs to Solar Team Twente, which they selected on the basis of superior performance.

UnitedSiC has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mohms (UF3C065030T3S) and 80mohms (UF3C065080T3S). The three-leaded, industry-standard TO220-3L package features enhanced thermal characteristics made possible by a sintered-silver packaging technology.

UnitedSiC has expanded its UF3C FAST series product offering by introducing an additional 1,200V high-performance SiC FET device in a TO-247-4L four-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150mΩ, bringing the total number of four-leaded FAST Series devices up to six and extending the on-resistance range of the entire series from 30mΩ all the way up to 150mΩ.

  The SiC FET in a ‘cascode configuration comes closer to the ideal power switch, believes Dr Anup Bhalla, VP engineering at UnitedSiC

UnitedSiC has announced that it has released a range of SiC JFET die suitable for co-packaging with a controller IC with built in low voltage MOSFET to fabricate an extremely fast, cascode-based, 20-100W Flyback product. Ranging from 650-1,700V, these normally-on SiC JFETs enable simplified start-up implementation with zero standby dissipation.

UnitedSiC has announced its expanded its UF3C FAST Series product offering by introducing an additional range of 650 and 1,200V high performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very fast switching, high power devices in a package capable of high power dissipation.

UnitedSiC launch its UF3C FAST series of 650 V and 1200 V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.

  Manufacturer of silicon carbide (SiC) power semiconductors, UnitedSiC, has announced the launch of its UF3C FAST series of 650 and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.

UnitedSiC’s Generation 3 1200 V and 650 V silicon carbide JFETs, expanding its existing unique portfolio of standalone normally-ON SiC JFETs.