First GaN FET with 1 mΩ on-resistance

The EPC2361 has a typical RDS(on) of just 1 mOhm in a thermally enhanced QFN package with exposed top and tiny, 3 mm x 5 mm, footprint. The maximum RDS(on) x Area of the EPC2361 is 15 mΩ*mm2 – over five times smaller than comparable 100 V silicon MOSFETs.

With its ultra-low on-resistance, the EPC2361 enables higher power density and efficiency in power conversion systems, leading to reduced energy consumption and heat dissipation. This breakthrough is particularly significant for applications such as high-power PSU AC-DC synchronous rectification, high frequency DC-DC conversion for data centres, motor drives for eMobility, robotics, drones, and solar MPPTs. 

“Our new 1 mΩ GaN FET continues to push the boundaries of what is possible with GaN technology, empowering our customers to create more efficient, compact, and reliable power electronics systems,” comments Alex Lidow, EPC CEO and Co-Founder.