Efficient Power Conversion (EPC) has announced that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC patent titled “Compensated gate MOSFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.

The EPC9192 Class-D audio reference design enables high power and high efficiency in a modular design for customisation and high performance.

EPC announces the availability of the EPC9193, a three-phase BLDC motor drive inverter using the EPC2619 eGaN FET.

EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

EPC has launched the 100 V, 1 mOhm EPC2361. This is the lowest on-resistance GaN FET on the market offering double the power density compared to EPC’s prior-generation products.

EPC GaN FETs set new standards in power density and efficiency for DC/DC conversion, utilising drivers and controllers from Analog Devices (ADI) to streamline GaN design. This collaboration enhances efficiency, minimises cooling expenses, and supports the highest power density in computing, industrial, and consumer DC/DC converters. EPC has introduced several reference designs featuring its GaN FETs alongside ADI controlle...

EPC has unveiled three new evaluation boards – EPC9179, EPC9181, and EPC9180 – featuring 75, 125, and 231A pulse current laser drivers, respectively.

EPC announces the availability of the EPC9194, a 3-phase BLDC motor drive inverter reference design.

EPC has announced the introduction of two new 40V rated radiation-hardened GaN FETs, with packaged versions.

 In Nuremberg, at PCIM Europe 2023, EPC is showing its latest GaN-based inverter reference design based on its EPC2302 eGaN FETs. It is designed to demonstrate the suitability of GaN for high power motor applications in equipment, vehicles and drones.

EPC announces the availability of the EPC9177, a digitally-controlled, single-output synchronous buck converter reference design board operating at 720kHz switching frequency converting an input voltage of 48, 36, 28V to a regulated 12V output voltage and delivering up to 20A continuous output current.

EPC announces the availability of the EPC9176, a 3-phase BLDC motor drive inverter using the EPC23102 ePower Stage GaN IC with embedded gate driver function and two GaN FETs with 5.2 mΩ typical RDS(on).

Users now have a tool to determine the derating needed in an application and reduce voltage derating factors, reveals Andrea Gorgerino, Director of global field application engineering, EPC.

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

The EPC9171 evaluation board converts 90 – 265 V universal AC input to a DC output voltage adjustable over a wide range of 15 V through 48 V. This reference design can supply 240 W maximum output power at 48 V output voltage and 5 A load current.

EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN FET.  

Efficient Power Conversion (EPC) provides engineers with an array of design tools, models, and performance simulations for high performance GaN-based designs.

The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.