EPC's 40V, 1.1mΩ FET offers smaller device

26th May 2022

EPC

Louis Regnier

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EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET.

The low losses and small size of the EPC2066 makes it the ideal switch for the secondary side of high power density 40 V – 60 V to 12 V DC-DC converters for the latest servers and artificial intelligence. It is also ideal for the secondary side synchronous rectification to 12V in power supply and silver box data center servers, and for high density motor drive applications from 24V – 32V. The high frequency operation, high efficiency, and an ultra-small 13.9 mm² footprint of the GaN FET combine for state-of-the-art power density.

The EPC2066 is footprint compatible with EPC’s prior Generation 4 product, the EPC2024. The Generation 5 improvement in Area x R_DS(on) gives the EPC2066 a 27% reduction in on-resistance in the same area.

“The EPC2066 is significantly smaller than any other FET in the market at this on resistance”, commented Alex Lidow, EPC’s co-founder and CEO. “This part is the perfect compliment to the recently released EPC2071 for LLC DC-DC for high power density computing applications.”