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EPC announces new benchmark for 100V GaN power transistors
3rd April 2025
Harry Fowle
Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100V eGaN FET that delivers superior performance, higher efficiency, and lower system costs for power conversion applications.
Designed for 48V intermediate voltage bus architectures, the EPC2367 significantly advances the performance of power systems by reducing power loss, increasing efficiency, and enabling more compact and cost-effective designs. This new device sets a benchmark in performance compared to both previous-generation GaN and traditional silicon MOSFET solutions.
Key advantages of the EPC2367
- Ultra-low on-resistance (RDS(on)): 1.2mΩ, a ~30% improvement over previous generation best-in-class devices.
- Smaller footprint: 3.3 × 3.3mm QFN package, reducing PCB space and enhancing thermal performance.
- Best-in-class switching Figures of Merit (FoM): EPC2367 outperforms competitors in hard and soft-switching applications, delivering superior efficiency and lower power losses.
- Enhanced thermal performance: Operates cooler under load, improving system reliability and enabling higher power densities.
- Outstanding temperature cycling reliability: 4× the thermal cycling capability compared to previous GaN generations, ensuring robust long-term operation.
Superior in-circuit performance
The EPC2367 has been rigorously tested in hard and soft-switching applications. Performance results demonstrate higher efficiency across the full power range, with significant power loss reductions. In a 1MHz, 1.25kW system, EPC2367 reduces power losses while achieving 1.25× the output power compared to previous GaN and Si MOSFET alternatives.
“The EPC2367 advances GaN technology with ultra-low on-resistance and superior thermal cycling, enabling engineers to boost efficiency and power density in AI servers, robotics, and automotive systems,” said Alex Lidow, EPC CEO and Co-Founder.
Development board
The EPC90164 development board is a half bridge featuring the EPC2367 GaN FET. It is designed for 80V maximum operating voltage and 35 A maximum output current. The purpose of this board is to simplify the evaluation process of power systems designers to speed their product’s time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Price and availability
- The EPC2367 is priced at $2.81 each in 3 Ku volumes.
- The EPC90164 development board is priced at $200.00 each.
