Transistors & rectifiers exhibit high temperature performance

These devices are targeted for use in a wide variety of applications including downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.

High temperature SJTs offered by GeneSiC exhibit rise/fall times of under 10ns, enabling over-10MHz switching as well as a square Reverse Biased Safe Operation Area (RBSOA). The transient energy losses and switching times are independent of junction temperature. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of RDS_(ON), and are capable of being driven by 0/+5V TTL gate drivers, unlike other SiC switches.

Advantages of the SJT in contrast to other SiC switches include higher long term reliability, over 10μs short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.

GeneSiC says its high temperature SiC Schottky rectifiers show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are suitable candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products enable long term use where high reliability is critical.

Products released as part of the 240mΩ SJT line include the 100 and 300V blocking voltage SJTs, GA05JT01-46 and GA05JT03-46. In the 4A Schottky rectifier range are 100, 300 and 600V blocking voltage diodes, GB02SHT01-46, GB02SHT03-46 and GB02SHT06-46. All devices are 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s authorised distributors.

“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation,” commented Dr. Ranbir Singh, President, GeneSiC. “These compact TO-46 packaged SJTs offer high current gains (over 110), 0/+5V TTL control and robust performance. These devices offer low conduction losses and high linearity. We design our ‘SHT’ line of rectifiers to offer low leakage currents at high temperatures. These metal can-packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions.”