90nm ultra-low-leakage embedded flash process platform to power MCU solutions

As a continuation of Hua Hong Semiconductor's 0.11um ultra-low-leakage technology, the process platform provides customers with competitive differentiated and cost-effective solution with lower power consumption, suitable for applications in Internet of Things (IoT), wearables, industrial and automotive electronics.

For the newly launched 90nm ULL eFlash process platform, the leakage of 1.5V core N-Type and P-Type MOS transistors reaches 0.2pA/um, effectively extending the standby time of MCU devices. The eNVM (Embedded Non-Volatile Memory) IP of this platform has unique advantages such as 100,000 to 500,000 endurance cycles and read speed reaching 30ns. The platform also features highly integrated logic which exceeds 400K gate/mm2, capable of helping customers to reduce the chip area in many ways.

The most important advantage of this process platform is the integration of the Company's proprietary split gate NORD eFlash technology. It has the smallest cell size and smallest area embedded NOR flash IP under the 90nm process within the industry, also advantage with fewer layers of mask which helping customers to further reduce the manufacturing cost of MCU, especially large-capacity MCU products. The platform supports RF, eFlash and EEPROM.

Executive Vice President of Hua Hong Semiconductor Dr Kong Weiran, said: "The Company is committed to innovation and continuous optimisation of differentiated technologies to provide customers with urgently needed, cost-effective process and technical services. While improving the 8-inch platform, it is speeding up the capacity expansion and technology R&D of the 12” production line.

“IoT and automotive electronics are incremental markets for MCU applications. The launch of the 90nm ultra-low-leakage eFlash technology platform further makes available more foundry options for Hua Hong Semiconductor's MCU customers in ultra-low power consumption applications."