I-fuse OTP memory solution on X-FAB 130nm RF-SOI

This qualification will allow customers to benefit from the incorporation of a compact (<0.2mm2 surface area) and robust OTP block into the core XR013 technology module, but without requiring additional or custom processing. Read operation is possible at both 2.5 and 1.8V for MIPI compatibility.

X-FAB’s XR013 is an open-platform, 130nm technology that is optimised for RF applications. These include cellular infrastructure, WiFi connectivity, automotive V2X communications, IoT, etc. The cooperation between Attopsemi and X-FAB presents greater scope for designers to integrate digital content with analogue trimming or data storage into next generation deployments, such as 5G New Radio (NR).

A key benefit of using Attopsemi I-fuse OTP memory on the XR013 RF platform is the flexibility with which RF products can address different regional market requirements via a single chip design (as different configurations can be stored). This will lead to project development cost savings, as well as facilitating inventory management.

“We’re very excited about the prospect of our I-fuse IP now being qualified for incorporation into the X-FAB XR013 process,” said Shine Chung, Chairman of Attopsemi. “We’re very pleased that our OTP was chosen by X-FAB’s customers for 5G applications. Thanks to the high reliability, high quality and fully testable IP, our I-fuse has been proven to meet X-FAB’s stringent demands in their advanced processes.”

“Close collaboration with Attopsemi has created a cost-effective OTP memory solution for our customers using XR013,” Dr Greg U’Ren, Director of RF Technology at X-FAB, added. “This will be pivotal in enabling our customers to increase their on-chip functionality, giving them a strong foundation for further innovation and allowing the requirements of different geographic locations to be attended to.”