Memory

  UC Berkeley researchers have discovered a new way to switch the polarisation of nanomagnets, paving the way for high-density storage to move from hard disks onto ICs.

Advantest has introduced the fastest fully integrated memory test card in history, the HSM16G. The card extends the high-speed testing capabilities of the company’s V93000 HSM series of testers to native 16Gb/s for at-speed testing of ultra-fast memory ICs. Advantest's ATE solution supports device engineering, debugging and volume production of today’s highest speed GDDR5 and future GDDR5X ICs, with parallel data busses up to 16Gb/s.

Microsemi Corporation has announced a compact form factor SATA SSD for industrial, defence, intelligence, UAV and secure laptop applications where ultimate security for data-at-rest is required. The low power mSATA SSD has 64GB Single-Level Cell (SLC) flash capacity in a 50x30mm compact form factor and is 65% smaller than similar 2.5” devices.

DVDs and Blu-ray disks contain so-called phase-change materials that morph from one atomic state to another after being struck with pulses of laser light, with data ‘recorded’ in those two atomic states. Using ultrafast laser pulses that speed up the data recording process, Caltech researchers adopted a novel technique, Ultrafast Electron Crystallography (UEC), to visualise directly in four dimensions the changing atomic configuration...

Toshiba has announced three SSD families fitted with high-speed PCIe interfaces that provide high-bandwidth point-to-point links with the processor and reduce system bottlenecks. The drives use the NVMe (Non-Volatile Memory Express) protocol and have been designed for various applications including high performance, thin and 2-in-1/convertible notebooks, all-in-one PCs and tablets and server/storage applications.

Hailed as the industry’s most innovative single-wire EEPROM with only two-pins (a data pin and ground pin for operation), the AT21CS01 family has been unveiled by Atmel. Suited for IoT, wearable, consumable, battery and cable identification applications, the devices are self-powered, eliminating the need for a power source or Vcc pin, with a parasitic power scheme over the data pin.

Toshiba has announced the development of the world’s first 16-die (max.) stacked NAND flash memory utilising Through Silicon Via (TSV) technology. The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilises the vertical electrodes and vias to pass through the silicon dies for the connection.

Toshiba has launched its latest generation of Bit Cost Scalable (BiCS) FLASH, a 3D stacked cell structure flash memory. Toshiba hails the device as the ‘world’s first’ 256Gb, 48-layer BiCS device, deploying industry-leading 3-bit-per-cell Triple-Level Cell (TLC) technology. BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory while enhanc...

Toshiba Electronics Europe has announced its next-gen enterprise Solid State Drives (eSSDs) designed for applications ranging from email servers, database servers, and virtualised enterprise file servers, to primary storage in read, write or mixed workload environments. The PX04S line features high-endurance, mid-endurance, value-endurance and read-intensive models optimised for different applications and workloads.

Swissbit has introduced the S-450 and S-450μ series SD and Micro SD memory cards, delivering top performance for demanding applications while maintaining high reliability and robustness. By combining SLC flash components with a powerful system architecture and intelligent firmware, Swissbit has been able to produce what it terms one of its best high performance, high reliability industrial SD memory card solutions.