Memory

Macronix International announced that the NAND MCP memory solution has been adopted and incorporated by Qualcomm Technologies, a subsidiary of Qualcomm Incorporated as a part of the reference design for a Qualcomm Technologies’ LTE Cat. M1/NB-1 chipset, the MDM9206 modem. Macronix’s industry-standard multichip packages (MCPs) combine RAM and Flash memories into one package, satisfying the demands of today’s consumers on the...

  The launch of JEDEC e∙MMC Version 5.1 compliant embedded NAND flash memory products has been announced by Toshiba Corporation’s Storage and Electronic Devices Solutions Company, with an enhanced operational temperature range of -40 to 105°C.

According to IC Insights’ 2017 McClean Report, sales of memory ICs are expected to show the strongest growth rate among major integrated circuit market categories during the next five years. 

Today's computers often use as many as four different kinds of memory technology, from the hard drive to the memory chips, each with its own strengths and weaknesses. A new memory technology may be poised to disrupt this landscape, however, with a unique combination of features. It goes by the unwieldy acronym STT-MRAM, which stands for spin-transfer torque magnetic random access memory.

A compact, bidirectional data memory module for tight mounting spaces is being offered by Balluff. The compact memory module with IP 67 protection is just 34x16x8mm in size and can be used as a memory storage device on interchangeable units such as milling heads on gantry type machining centres.

The 20th anniversary edition of IC Insights' McClean Report will be released in January of next year. The following represents a portion of the memory forecast that will appear in the new report. After increasing by more than 20% in both 2013 and 2014, the memory market fell upon difficult times in 2015. 

At the 2016 IEEE International Electron Devices Meeting, in a special poster session on MRAM, imec presented a 8nm p-MTJ device with 100% tunnel magnetoresistance (TMR) and coercive field as high 1,500Oe.

Leti researchers have demonstrated that memristive devices are excellent candidates to emulate synaptic plasticity, the capability of synapses to enhance or diminish their connectivity between neurons, which is widely believed to be the cellular basis for learning and memory. The breakthrough was presented at IEDM 2016 in San Francisco in the paper, “Experimental Demonstration of Short and Long Term Synaptic Plasticity Using OxRAM Mult...

  The development of a high-speed in-memory data deduplication technology for all-flash arrays has been announced by Fujitsu Laboratories. These are large-scale, high-speed storage systems and use multiple flash devices such as solid-state drives. 

Scientists often discover interesting things without completely understanding how they work. That has been the case with an experimental memory technology in which temperature and voltage work together to create the conditions for data storage. But precisely how was unknown. But when a Stanford team found a way to untangle the chip’s energy and heat requirements, their tentative findings revealed a pleasant surprise: The process may be...