Memory

Renesas Technology Europe today announced that it has commenced development of low power and fast SRAM products that are specifically suited to automotive applications. They are available as 4, 16, or 32Mbit low power SRAM and 4Mbit fast SRAM devices. Sample shipments will commence during June 2009 followed by mass production during July 2009.

Toshiba has announced the launch of a new line-up of 43nm single-level cell (SLC) NAND Flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available. The new devices will start to come to market in the first ...

Toshiba Electronics Europe has announced the introduction of a new range of USB flash memory drives that feature a redesigned case and a maximum memory capacity of 16GByte, double that of existing products. The stylish design is shorter than previous models and also more robust. The drives will be showcased at the GITEX Technology Week in Dubai.

Innovative Silicon has demonstrated that its Z-RAM memory technology continues to show considerable advantages over DRAM implementations and other proposed floating body memory designs. Dr. Mikhail Nagoga, a principal member of ISi’s technical staff, presented a paper written by Dr. Serguei Okhonin, chief scientist at ISi, that describes the smallest silicon dynamic memory devices ever reported, with the largest programming window. Separatel...

Ramtron International has announced the first device in a family of new F-RAM products that offer high-speed read/write performance, low voltage operation, and optional device features. The first device in Ramtron’s V-Family of F-RAM products is the FM25V10, a 1-megabit (Mb), 2.0 to 3.6-volt, serial peripheral interface (SPI) nonvolatile RAM in an 8-pin SOIC package that features fast access, NoDelay™ writes, 1E14 read/write cycles, and low ...

SST (Silicon Storage Technology, Inc.) today announced the SST25WF040 device, the company’s newest addition to its widely adopted 1.8V 25WF Series SPI serial flash memory family. The 4-Mbit, small form factor SST25WF040 is ideal for battery-powered, space- and height-constrained mobile applications where performance, reliability and low-power consumption are crucial to product success. The SST25WF040 continues SST’s commitment to prov...

Toshiba Electronics Europe has announced the launch of a new range of SD format Flash memory cards that offer the widest choice for all uses from premium consumer applications to high-speed professional requirements.

Ramtron International has expanded its line of AEC-Q100-specified F-RAM memory devices, qualifying the FM24CL64 64-kilobit (Kb) serial F-RAM to operate over the Grade 3 automotive temperature range of -40ºC to +85ºC. The FM24CL64 is part of Ramtron’s growing family of Grade 1 (+125ºC) and Grade 3 AEC-Q100-qualified automotive memory products.

Ramtron International has announced that China’s Shanghai Welltech Automation Co., Ltd., a leading pressure transmitter and magnetic flow meter supplier, has designed Ramtron’s FM25L16 16-kilobit (Kb) serial F-RAM memory device into its 2000S safe pressure transmitters. F-RAM was selected to replace EEPROM in Welltech’s new, intrinsically safe, explosion-proof transmitters.

Microchip has announced a family of serial EEPROM devices with a single I/O bus interface. The 11XX010, 11XX020, 11XX040, 11XX080 and 11XX160 are the first single I/O EEPROM devices that can support data rates from 10 kHz to 100 kHz; and the only 1, 2, 4, 8 and 16 Kbit EEPROMs available in a 3-pin SOT-23 package (in addition to other higher pin count packages). The new devices also include advanced such as status registers; software write protect...