Demo boards reduce time to market for rad-hard GaN power devices

The demonstration boards can be used by developers to evaluate the feature and capabilities of rad-hard GaN power devices into high reliability (hi-rel) and aerospace applications.

The family of demonstration boards offers fast prototyping and evaluation of the company's rad-hard eGaN power devices. The family consists of a trio of low-side driver demo boards (the EPC7C001, EPC7C002 and EPC7C003). These use EPC Space’s eGaN gate driver modules to drive a corresponding 40V, 100V, or 200V discrete eGaN FET.

There is also the EPC7C005 demonstration board that allows evaluation of the switching operation and conversion efficiency performance of the FBS-GAM02-P-C50 rad-hard power module connected as a half-bridge point-of-load (POL) output stage.

Finally, there is the EPC7C006 demo board which is a three-phase motor demonstration board that uses the FBS-GAM02-P-R50 module. “Radiation Hardened eGaN FETs and ICs offer designers improved performance, lower cost, and shorter delivery times compared to RH silicon-based devices, said Bel Lazar, CEO of EPC Space. He describes the evaluation platform as a convenient way to assist designers looking to convert their rad-hard silicon designs to take advantage of GaN's higher power densities, efficiencies and cost advantages.

The demonstration boards are available with lead times of six weeks.