Integrated GaAs technology enables single chip GaAs solutions for 5G

WIN is the first compound semiconductor wafer foundry to commercialise an integrated GaAs platform capable of producing single chip front-ends for 5G handsets and mmWave radio access networks.

The core of PIH1-10 is an E-Mode pHEMT that provides the gain, power density and efficiency for mmWave transmit power amplifiers, and the noise performance needed in the receive LNA. This versatile single supply transistor can support Tx power levels of 30dBm and Rx noise figure of 2.5dB at mmWave frequencies.

Furthermore, the integrated PIN diode provides excellent mmWave Tx/Rx switch functionality with <1dB insertion loss, enabling monolithic integration of all front-end functions on a single chip. GaAs technology outperforms BiCMOS in every front-end function, and mmWave single-chip front ends realised in PIH1-10 can reduce array power consumption, simplify thermal management, and extend battery life in 5G user equipment while improving total cost of ownership for mmWave access points.

David Danzilio, Senior Vice President of WIN Semiconductors, said: "The commercial release of PIH-10 provides a new set of integrated GaAs solutions to improve mmWave front end performance. High efficiency Ka-band GaAs power amplifiers, LNAs and low loss switches on a compact single chip front-end will enhance the user experience through improved battery life and better 5G mmWave coverage.

"Integrated GaAs front-ends can also be used in mmWave access points, and the higher Tx power and efficiency of PIH1-10 enables smaller active antenna arrays with lower total power consumption than existing RAN hardware. 

“Network owners expect the wireless supply chain to reduce equipment total cost of ownership and provide flexible mmWave active antenna solutions to support multiple deployment scenarios. Higher performance integrated GaAs front-ends provide an optimum path to satisfy these diverse requirements."