SiC MOSFET exploit SiC performance

The company believes they will help power conversion schemes designs to save space and weight, reduce cooling requirements, improve reliability and lower system costs.

The 1,200V SiC MOSFETs operate with ‘benchmark’ dynamic losses that are an order of magnitude lower than 1,200V silicon IGBTs. They can therefore support system improvements in applications such as photovoltaic inverters, UPS (uninterruptible power supplies) or charger/storage systems.

The MOSFETs are compatible with the +15V/-5V voltages typically used to drive IGBTs. They combine a benchmark threshold voltage rating of 4 V with short-circuit robustness and controllable dv/dt characteristics. Benefits over silicon IGBTs include temperature-independent switching losses and threshold-voltage-free on-state characteristics.

The first discrete 1,200V CoolSiC MOSFETs feature on-resistance (R _DS(ON)) ratings of just 45mΩ. They will be available in TO-247 packages. Both devices are ready for use in synchronous rectification schemes due to the integration of a commutation, robust body diode operating with nearly zero reverse recovery losses. The four-pin package incorporates an additional (Kelvin) connection to the source, which is used as a reference potential for the gate driving voltage. By eliminating the effect of voltage drops due to source inductance, this further reduces switching losses, especially at higher switching frequencies.

Infineon has also announced 1,200V ‘Easy1B’ half-bridge and booster modules based on the SiC MOSFET technology. These have PressFIT connections, good thermal interface, low stray inductance and robust design, and R _DS(ON) rating options of 11 and 23mΩ.

Volume production is planned for 2017.

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