SiC FETs offer silicon substitution to cut losses in power systems

Used for power factor correction and DC/DC conversion in both hard-switched and ZVS-switched systems, applications include Electric Vehicle (EV) chargers, power supplies, motor drives and renewable energy inverters.

The maximum drain current (ID) ratings for these SiC transistors ranges from 31-85A. Low RDS (ON), specified at 27Ω, is best in class for TO-220 devices. Furthermore, a built-in low Qrr body diode eliminates the need for an anti-parallel diode.

With their combination of low RDS(ON), high current rating and thermal performance, the UJ3C series can be used in hard-switched converters and zero-voltage switching applications such as LLC and phase-shifted full bridge converters. The devices also enable switching frequencies of up to 500kHz, allowing designers to reduce the size and cost of other system components, including bulky inductors, capacitors and thermal management parts

UnitedSiC’s 'Simple Silicon Substitution' technology comprises a patent-pending metal gate SiC JFET co-packaged with a custom designed, ESD protected, low voltage silicon MOSFET.  Advanced proprietary die-attach and packaging techniques minimise losses and ensure effective thermal management. As a result, designers using silicon transistors in legacy designs can easily upgrade their existing system’s power performance using UnitedSiC’s plug-and-play devices.

Commenting on further benefits of the new SiC transistor family, Anup Bhalla, UnitedSiC’s VP of Engineering said: “With ESD-protected gates (HBM class 2) and strong avalanche capability these SiC FETs are both more economical and more rugged that GaN devices with comparable ratings. In the most demanding applications, such as EV charging, we are now seeing a clear preference for SiC technology for both new designs and to replace silicon Superjunction MOSFETs in existing systems.”