Power MOSFETs provide reduced RDS(ON), output & gate charges

5th February 2015

Barney Scott

0 0

Infineon Technologies has added 80 and 100V variants to its OptiMOS 5 power MOSFET portfolio. These next-gen Power MOSFETs are optimised for high switching frequencies, especially used in synchronous rectification applications for telecomms and server power supplies, as well as in industrial applications such as solar, low voltage drives and power adapters.

The OptiMOS 5 MOSFETs offer the industry’s lowest RDS_(ON) – up to 45% reduction for 80V and up to 24% reduction for 100V compared to the previous generation. Due to the lower resistance there is significantly less need to parallel parts, resulting in reduced material cost. The generation offers Infineon's highest levels of power density and energy efficiency.

In comparison to the previous generation, the OptiMOS 5 80V variant offers 38% reduction in output charge and the 100V variant a 25% reduction. Less output charge means reduced switching losses and lower voltage overshoot in hard switching topologies and synchronous rectification. This results in faster design and lower development costs. The reduction in gate charge of 24% for 80V and 29% for 100V also reduces switching losses especially at light load operation and in applications requiring high efficiency throughout the whole load range, such as micro-inverters and power optimisers for solar applications.

OptiMOS5 80V and 100V are offered in seven different packages: SuperSO8, S308, TO-Leadless, TO-220, TO-220 FullPAK, D²PAK and D²PAK 7Pin with RDS_(ON) ranging from 1-4, 4-8 and 8-2mΩ for 80V and 1-4, 4-8 and 8-10mΩ for 100V. Samples are available in both voltage classes and all packages. Products are in volume production.