MOSFETs’ small package increases density and saves space

Voltages are 60, 80 and 100V. The MOSFETs are available in a 2.0 x 2.0mm PQFN package which is particularly suitable for wireless charging, adapter, and telecomms applications, where the form factor is critical. The small package size enables higher power density and improved efficiency, says the company. At the same time it saves space, reduces parts count and reduces overall system cost.

The MOSFETs deliver between 11 and 40% lower RDS(on) than competitive products, claims the company. The low gate charge (Qg) reduces switching losses without increasing conduction losses and the output capacitance (C OSS) and reverse recovery charge (Q rr) have been optimised and the FOM g (RDS(on) x Q g/gd) has been improved. According to Infineon, this allows the IR MOSFET devices to operate at high switching frequencies of up to 6.78MHz, which is a requirement in resonant wireless charging applications. The logic level gate drive provides a low gate threshold voltage (V GS(th)) which means that the MOSFETs can be driven at 5.0V and directly from microcontrollers.

The IR MOSFET family is available now in 60 and 80V versions, with a 100V device currently in development.

PCIM Europe 2017 Stand 9 - 412