MOSFETs offer a 50% reduction in turn-off losses

The CoolMOS C7 achieves an industry first by delivering an area-specific on resistance of just 1Ω per mm², extending Infineon’s portfolio of products with lowest RDS_(ON) per package to support customer efforts to further increase power density. The CoolMOS series features ultra-low switching losses and targets high power SMPS applications such as server, telecomms, solar and industrial applications requiring high efficiency, a reduced BOM and TCO.

Efficiency and TCO driven applications such as hyperscale data centres and telecomms base stations benefit from the switching loss reduction offered by the CoolMOS C7. Efficiency gains of 0.3 to 0.7% in PFC and 0.1% in LLC topologies can be achieved, leading to significant total cost of ownership benefits. In the case of a 2.5kW server PSU, for example, using C7 600V MOSFETs can result in energy cost reductions of around 10% for PSU energy loss.

In BOM and cost driven designs such as enterprise servers, the CoolMOS C7 600V devices offer a cost reduction in magnetics. Due to the significantly lower gate charge and output capacitance, the C7 can be operated at two times higher switching frequencies with only a marginal penalty in efficiency. This enables the size of magnetic components to be minimised, lowering the overall BOM cost. For example, doubling the switching frequency from 65 to 130kHz may reduce magnetic component cost by as much as 30%.

The CoolMOS C7 600V family will be manufactured in two 300mm fabs ensuring security of supply for customers. The family comes in a broad range of RDS_(ON) values and packages, with innovative options such as the TO-247 4-pin package available immediately at time of launch. The fourth pin boosts efficiency in full load by up to 0.4% by eliminating voltage drops across the source inductance caused by fast transients.

Infineon´s complementary 2EDN7524 EiceDRIVER ICs in industry standard pin-out feature two independent, non-isolated low-side gate drivers each capable of providing a 5A source and sink peak current. Both channels operate with typical rise and fall times of just 5ns, while the excellent 1ns channel-to-channel delay matching allows configuration of simultaneous switching to double the total drive current. Despite the high current, the output stages offer a very low RDS_(ON), minimising power dissipation in the driver even if a very small or no external gate resistor is used. Exceptional robustness against ground bounce for system reliability is ensured through the ability of the driver ICs to handle up to -10VDC at the control and enable inputs.

CoolMOS C7 600V MOSFETs will initially be available in TO-220, TO-247 and TO-247 4-pin packages with maximum RDS_(ON) ratings from 40 to 180mΩ. Samples for TO-220 FP, DPAK, D 2PAK, ThinPAK and the complete portfolio of RDS_(ON) values will be available in Q3 2015. Volume production of the 2EDN7524 MOSFET drivers in a DSO-8 package will begin in August 2015. Further package and functionality options will become available in Q4 2015.

“As part of Infineon’s high-voltage MOSFET portfolio, the CoolMOS C7 600V family is a major ‘stepping stone’ to Infineon’s upcoming GaN devices which are expected to launch in early 2016,” commented Peter Wawer, Vice President and General Manager, Businessline AC/DC, Infineon. “The CoolMOS C7 devices deliver lowest losses and higher frequencies up to 200kHz in an established and proven technology being available in high volume, while Infineon’s GaN technology will further increase the frequency range and enable new topologies.”