MOSFETs meet quasi resonant flyback topologies

The company claims that the MOSFETs provide improvements compared with superjunction technologies in smart phones and tablet chargers, which benefit from soft switching topologies, as well as notebook adapters.

According to the company, the MOSFETs support fast switching and high power density designs for TV adapters, lighting, audio, and aux power.
The 700V CoolMOSP7 technology delivers reduced switching losses of 27 to 50% compared with competitor parts, and up to 3.9% higher efficiency in a flyback-based charger application, it claims. The device temperature is reduced by up to 16K. In comparison to the previous 650V C6 technology, it offers a 2.4% gain in efficiency and 12K lower device temperature.
The integrated zener diode increases ESD ruggedness of up to HBM Class 2 level. This improves assembly yield which leads to less production related failures and saves manufacturing costs. The 700V CoolMOS P7 shows low losses due to its very low RDS(on) Q g and RDS (on) EOSS. Compared to C6 technology and some competitor devices, the family features an additional extra 50V blocking voltage.

The technology has been developed with a VGSth of 3.0V and a very narrow tolerance of ±0.5V. As well as ease of design-in, the technology enables the use of lower gate source voltage, which makes it easier to drive and leads to less idle losses.

The family is available with RDS(on) package combinations including 360 to 1400mΩ in IPAK SL, DPAK and TO-220FP.