MOSFET sets efficiency and thermal performance benchmark

According to Infineon, they offer up to 0.6% efficiency gain, which translates into two to 8°C lower MOSFET temperature compared to the CoolMOS C3 or to competitor parts, tested in typical flyback applications. To achieve this benchmark, the company has reduced E _oss and Q _g, as well as a reduced C _iss and C _oss. The improved performance enables higher power density designs through lower switching losses and better DPAK R _DS(on) products, claims the company, helping designers save bill of material costs and reduce assembly efforts.

The integrated Zener diode significantly improves ESD ruggedness, reducing ESD related production yield losses. Claimed to have industry leading V _(GS)th of 3 V and the smallest V _GS(th) variation of only ±0.5 V, the MOSFET allows for lower driving voltage and lower switching losses and helps to avoid unintentional operation in the linear region.

There will be 12 R _DS(on) classes and six packages available. Products with R _DS(on) of 280, 450, 1,400 and 4,500mΩ can be ordered now.