Power

MOSFET pushes performance boundary to the next level

23rd November 2017
Lanna Deamer
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Infineon Technologies' latest high voltage Superjunction MOSFET technology has been released. The 600V CoolMOS CFD7 completes the CoolMOS 7 series. This new MOSFET addresses the high power SMPS market for resonant topologies. It offers efficiency and reliability in soft switching topologies like LLC and ZVS PSFB.

This makes it a suitable fit for high power SMPS applications such as servers, telecom equipment power, and EV charging stations.

The 600V CoolMOS CFD7 succeeds the CoolMOS CFD2. The new MOSFET is up to 1.45% more efficient than its predecessor or competitor offerings. It combines all of the advantages of a fast switching technology with high commutation ruggedness, without impacting the easy implementation in the design-in process.

The product features reduced gate charge (Q g) and improved turn-off behaviour. Additionally, it has a reverse recovery charge (Q rr), which is up to 69% lower than competing products in the marketplace.

The MOSFET provides solutions for THD and SMD devices, which supports high power density solutions.

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