Innoscience launches low voltage HEMT family

Rated at 40V, 100V, and 150V, the ‘flip chip’ formatting makes it simple for engineers to use.

40V-rated FCQFN devices are available with an on-resistance value of 4.3mΩ (3x4mm chip size). One hundred V HEMTs are offered with RDS(on) ratings of 2.8mΩ (3 x 5mm) and 1.8mΩ (4 x6 mm), while the 150V-rated parts measuring 4 x 6mm are available with 3.9mΩ and 7mΩ RDS(on).

The 40V parts using Innoscience’s latest GaN processes achieve industry-leading performance with best-in-class figure-of-merit (FOM) values for Qgg*Ron and Idss*Ron.

The parts low drain and gate leakage currents enable them to be used in mobile markets and direct-battery-connected applications. Other applications include USB Type C buck-boost converters in laptops. Furthermore, with its latest generation process, Innoscience maintains very tight control of the epitaxy, resulting in a very uniform threshold voltage and on-resistance, leading to a very high wafer yield.

100V devices suit DC/DC conversion at power levels of up to 2kW, due to their very low on-resistance. When used in parallel configuration, power levels up to 8kW can be achieved.

The new 150V targets industrial applications, including solar installations. They have been designed to be very rugged so they do not need the industry-standard 80% derating to be applied (i.e., they are rated at 100% of their voltage). All the new 40V, 100V, and 150V HEMTs have been tested to and exceeded JEDEC and the GaN-specific JEP 180 standards.

One last important point to highlight is that the 1.8mΩ 100V HEMTs are pin-for-pin compatible with the new 3.9mΩ and 7mΩ 150 V parts as they are all packaged in FCQFN 4 x 6mm: this enables great design flexibility.