Infineon Technologies & Panasonic to develop GaN devices

This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches, a setup not available for any other GaN on silicon device so far. The companies will showcase samples of a 600V 70mΩ device in a DSO package at the APEC trade show, which takes place from 15^th to 19^th March in Charlotte, North Carolina.

GaN on silicon has been receiving significant attention as one of the next compound semiconductor technologies that will on the one hand enable high power density and therefore a smaller footprint, and on the other hand serve as a major key for energy efficiency improvement. In general, power devices based on GaN on silicon technology can be used in a wide range of fields, from high voltage industrial applications such as power supplies in server farms to low voltage applications such as DC/DC conversion. According to an IHS market research report, the GaN on silicon related market for power semiconductors is expected to grow with a CAGR of more than 50%, leading to an expansion of volume from $15m in 2014 to $800m by 2023.

“We are convinced that enhancement mode GaN on silicon switches, together with our corresponding driver and optimised driving scheme, will provide high value to our customers, while the dual sourcing concept will help them manage and stabilise their supply chains,” said Andreas Urschitz, President, Power Management & Multimarket Division, Infineon Technologies.

“Panasonic developed its normally-off GaN power technology, which has a simple configuration and easy-to control dynamics, by making full use of its compound semiconductor experience.We expect to accelerate the expansion of GaN power devices by licensing our normally-off GaN transistor structure out of our GaN power technology to Infineon,” commented Toru Nishida, President, Panasonic Semiconductor Solutions.