Infineon’s first 15V trench power MOSFETs with OptiMOS 7 technology

Infineon Technologies AG has responded to system-level trends by launching its new OptiMOS 7 family, the first 15V trench power MOSFET technology. The OptiMOS 7 15V series is primarily designed for optimised DC/DC conversion in servers, computing, data centre, and artificial intelligence applications.

The product range includes the latest PQFN 3.3 x 3.3mm² Source-Down, with bottom- and dual-side cooling variants in standard- and centre-gate footprints. It also features a robust PQFN 2 x 2mm² variant with a reinforced clip. The OptiMOS 7 15V technology is specifically developed for DC/DC conversions with low output voltages, especially in server and computing environments. This innovation is in line with the emerging trends towards high ratio DC/DC conversion in data centre power distribution.

In comparison to the established OptiMOS5 25V, the new OptiMOS 7 15V achieves a ~30% reduction in R DS(on) and FOMQ g, and a ~50% reduction in FOMQ OSS by lowering the breakdown voltage. The PQFN 3.3 x 3.3mm² Source-Down package variants offer a more versatile and efficient PCB design. Additionally, the PQFN 2 x 2mm² package provides a pulsed current capability higher than 500A and a typical R thJC of 1.6K/W. By minimising conduction and switching losses and incorporating advanced packaging technology, thermal management becomes straightforward and efficient, establishing new standards for power density and overall efficiency.

Availability The OptiMOS 7 15V product portfolio is now available for order and comes in two package sizes: PQFN 3.3 x 3.3mm² Source-Down variants and PQFN 2 x 2mm².