Infineon introduces CoolSiC MOSFET G2

The launch of the CoolSiC MOSFET 650 and 1200V Generation 2 marks a significant advancement, offering up to a 20% improvement in critical MOSFET metrics such as stored energies and charges over its predecessors, without sacrificing the high standards of quality and reliability.

The Generation 2 (G2) CoolSiC MOSFET technology capitalises on the performance characteristics of silicon carbide, enabling reduced energy losses and higher efficiency in power conversion. This benefits customers across a wide range of semiconductor power applications, including photovoltaics, energy storage, DC EV charging, motor drives, and industrial power supplies. For example, a DC fast charging station for electric vehicles utilising CoolSiC G2 technology can achieve up to 10% less power loss compared to older generations, facilitating greater charging capacities without the need for larger equipment. Similarly, traction inverters built with CoolSiC G2 devices can extend the driving range of electric vehicles. Additionally, solar inverters designed with this new technology can be more compact while delivering high power output, effectively lowering the cost per watt.

Infineon’s CoolSiC MOSFET trench technology, integral to the CoolSiC G2 solutions, optimises design trade-offs, enhancing efficiency and reliability beyond what has been previously available with SiC MOSFET technologies. When combined with Infineon’s acclaimed .XT packaging technology, the potential for CoolSiC G2-based designs is further elevated through improved thermal conductivity, assembly control, and performance.

With expertise spanning silicon, silicon carbide, and gallium nitride (GaN), Infineon offers design flexibility and application knowledge. The company's commitment to innovative semiconductors based on wide-bandgap (WBG) materials like SiC and GaN is key to the efficient and conscious use of energy, paving the way for decarbonisation initiatives.