Infineon and Panasonic accelerate GaN technology development

2nd September 2021

Kiera Sowery

0 0

Infineon and Panasonic have signed an agreement for the joint development and production of the second generation (Gen2) of their gallium nitride (GaN) technology, claiming to offer higher efficiency and power density levels. The performance and reliability combined with the capability of 8" GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed as 650V GaN HEMT. The devices will allow for ease of use and provide an improved price-performance ratio, targeting, amongst others, high- and low-power SMPS applications, renewables, motor drive applications.

The company claim that for many designs, GaN offers fundamental advantages over silicon. The specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs qualify GaN HEMTs for high-speed switching. The resulting power savings and total system cost reduction, operation at higher frequencies, improved power density, and overall system efficiency make GaN a very attractive choice for design engineers.

“In addition to the same high reliability standards as for Gen 1, with the next-gen customers will benefit from even easier control of the transistor as well as a significantly improved cost position, thanks to moving to an 8" wafer manufacturing,” said Andreas Urschitz, President of Infineon’s Power and Sensor Systems Division.

Like the jointly developed Gen 1 devices, known as Infineon’s CoolGaN and Panasonic’s X-GaN, the Gen-2 will be based on the normally-off GaN-on-silicon transistor structure. This, in combination with the robustness of the hybrid-drain-embedded gate injection transistor (HD-GIT) structure, makes these components the product of choice and one of the most long-term reliable solutions in the market, claim the company.

“We are delighted to extend our partnership and collaboration with Infineon on GaN components. Within the joint approach, we will be able to apply Gen1 and Gen2 devices on high quality and based on latest innovation developments”, said Tetsuzo Ueda, Associate Director of Engineering Division, Industrial Solutions Company, Panasonic Corporation.