IGBT & freewheeling diode function on a single chip

Compared to previous modules with the same footprint, the RCDC technology delivers a 33% increase in current density and improved thermal performance. Thus it supports longer lifecycles and enhanced reliability, ultimately minimising maintenance.

With the RCDC technology, Infineon extends its high-performance 6.5kV KE3 portfolio of IGBTs. The increased current density is a result of more active silicon area in both forward and reverse current direction giving designers the flexibility to increase system output power without incurring space penalties. Alternatively, the benefits of increased power density can be used to maintain power while reducing the number of IGBTs and, therefore, system size, weight and cost.

Infineon’s RCDC solution is supplied in an IHV-A high isolation package with an industry-standard footprint, supporting ‘drop-in’ replacement for existing applications. As well as facilitating higher power densities, the monolithic integration of IGBT and diode results in a significant improvement in the diode I 2t value and the IGBT and diode thermal impedance. The latter ensures good thermal performance over the full range of operation. A lower virtual junction temperature ripple supports extended lifetime operation, while the option to use gate control allows designers to optimise overall efficiency by trading off conduction and switching losses.

Engineering samples of the RCDC modules are available now, with starter kits including driver evaluation board scheduled for Q4 2015. To simplify and speed implementation Infineon is offering a variety of design-in support options including application notes and control concepts.