High-voltage power MOSFET with ultra-low on resistance provides low power consumption

Thanks to the high-precision super junction structure of the power MOSFET, which is designed for a drain-source voltage of 600 V, the figure of merit (FOM) has been improved by approximately 90 percent compared to previous planar-construction power MOSFETs.

The improved power conversion efficiency of the RJK60S5DPK helps to significantly reduce power consumption in high-output switching power supplies, for example, for mobile phone base stations, PC servers and solar power generation systems.

The package of the new RJK60S5DPK power MOSFET is equivalent in size to the TO-3P standard package and the pin assignments conform to the industry standard. This means it can easily be mounted on switching power supply circuit boards that have been evaluated using conventional planar MOSFET devices.