GaN platforms are enhancement mode & cascode configured

Infineon’s expanded offering will include dedicated driver and controller ICs which enable the topologies and higher frequencies that fully leverage the benefits of GaN. The offering is further enhanced by a broader patent portfolio, GaN-on-Silicon epitaxy process and 100V-600V technologies resulting from the acquisition of International Rectifier. Additionally, through a strategic partnership with Panasonic, Infineon and Panasonic will jointly introduce devices utilising Panasonic’s normally-off (enhancement mode) GaN-on-Silicon transistor structure integrated into Infineon’s Surface Mount Device (SMD) packages, providing a highly efficient, easy-to-use 600V GaN power device with the added benefit of dual sourcing.

As a result, Infineon now offers customers complete system know-how combined with the most comprehensive range of GaN technologies and products in the industry. Additionally, the company provides manufacturing capabilities, volume capacity and second sourcing for normally-off GaN power devices in an Infineon SMD package.

GaN-on-Silicon-based technology delivers increased power density and higher energy efficiency in a smaller footprint compared to Silicon-based solutions, and is, therefore, well suited to a wide range of applications from consumer goods such as television power supplies to Class D Audio amplifiers to SMPS used in server and telecomms equipment. According to an IHS market research report, the GaN-on-Silicon market for power semiconductors is expected to grow at a CAGR of more than 50%, leading to an extension of volume from $15m in 2014 to $800m by 2023.

Infineon and Panasonic will showcase samples of a 600V 70mΩ device in a DSO package at APEC 2015, which takes place from 15^th to 19^th March in Charlotte, North Carolina. Demonstrations of both enhancement mode and cascode configuration technologies will also be featured. Samples of enhancement mode and cascode devices will be available to customers under specific Non-Disclosure Agreements. Fully released mid-voltage cascode devices are available for complying Class D Audio customers.

“Infineon’s GaN-on-Silicon portfolio combined with the acquisition of International Rectifier’s GaN platform together with our partnership with Panasonic clearly positions Infineon as the technology leader in this promising GaN market,” said Andreas Urschitz, President, Power Management & Multimarket Division, Infineon Technologies. “In line with our ‘Product to System’ approach, our customers can now choose enhancement mode or cascode configuration technologies according to their application/system requirements. At the same time, Infineon is committed to developing SMD packages and ICs that will further leverage the superior performance of GaN in a compact footprint. As a real world example, using our GaN technology, a laptop charger found on the market today could be replaced by one that is up to four times smaller and lighter,” Urschitz added.